atp214 no. a1712-1/7 features ? on-resistance r ds (on)1=6.2m (typ.) ? input capacitance ciss=4850pf(typ.) ? 4v drive ? halogen free compliance ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 60 v gate-to-source voltage v gss 20 v drain current (dc) i d 75 a drain current (pw 10 s) i dp pw 10 s, duty cycle 1% 225 a allowable power dissipation p d tc=25 c60w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 94 mj avalanche current *2 i av 38 a note : * 1 v dd =15v, l=100 h, i av =38a * 2 l 100 h, single pulse package dimensions unit : mm (typ) 7057-001 ordering number : ENA1712a 62012 tkim/70710pa tkim tc-00002343 atp214 n-channel silicon mosfet general-purpose switching device applications http:// semicon.sanyo.com/en/network product & package information ? package : atpak ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type: tl marking electrical connection 1 : gate 2 : drain 3 : source 4 : drain sanyo : atpa k 0.7 0.4 0.55 9.5 7.3 0.5 1.7 4.6 6.05 13 2 6.5 0.6 4 0.8 0.5 1.5 0.4 2.6 4.6 0.4 0.1 2.3 2.3 tl atp214 lot no. 1 3 2,4 sanyo semiconductors data sheet atp214-tl-h
atp214 no. a1712-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 60 v zero-gate voltage drain current i dss v ds = 60 v, v gs =0v 1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance | yfs | v ds =10v, i d = 38 a 100 s static drain-to-source on-state resistance r ds (on)1 i d = 38 a, v gs =10v 6.2 8.1 m r ds (on)2 i d = 19 a, v gs =4.5v 8.2 11.5 m r ds (on)3 i d = 10 a, v gs =4v 9.2 14 m input capacitance ciss v ds =20v, f=1mhz 4850 pf output capacitance coss 370 pf reverse transfer capacitance crss 280 pf turn-on delay time t d (on) see speci ed test circuit. 30 ns rise time t r 240 ns turn-off delay time t d (off) 360 ns fall time t f 250 ns total gate charge qg v ds =30v, v gs =10v, i d =75a 96 nc gate-to-source charge qgs 18.5 nc gate-to-drain ?miller? charge qgd 18 nc diode forward voltage v sd i s =75a, v gs =0v 0.93 1.2 v switching time test circuit ordering information device package shipping memo atp214-tl-h atpak 3,000pcs./reel pb free and halogen free pw=10 s d.c. 1% p. g 50 g s d i d =38a r l =0.79 v dd =30v v out atp214 v in 10v 0v v in
atp214 no. a1712-3/7 i d -- v ds i d -- v gs drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a v ds =10v it15694 it15695 0 4.5 4.0 1.5 0 0 75 40 5 25 65 55 60 70 50 30 15 20 45 35 10 2.0 0.2 0.6 1.2 0.4 0.8 1.6 1.4 1.0 1.8 0 100 80 50 60 90 70 3.0 1.0 2.5 0.5 2.0 3.5 40 30 10 20 4.5v v gs =2.5v --25 c 25 c tc=75 c 16.0v 8.0v 10.0v 3.5v 4.0v tc=25 c 3.0v 6.0v r ds (on) -- v gs r ds (on) -- tc i s -- v sd sw time -- i d gate-to-source voltage, v gs -- v case temperature, tc -- c static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m drain current, i d -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v source current, i s -- a | y fs | -- i d forward transfer admittance, | y fs | -- s ciss, coss, crss -- v ds 060 20 30 40 50 10 it15701 it15700 it15699 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.001 0.01 7 5 3 2 it15698 25 c --25 c f=1mhz coss crss tc=75 c 0.1 1.0 2 23 5 23 57 10 357 100 7 5 100 1000 10 3 2 5 7 3 2 5 7 0.1 1.0 23 57 7 23 5 100 v dd =30v v gs =10v t d (off) t f t d (on) t r it15696 1 2 20 16 24 36 589 71012 11 14 15 13 18 12 16 14 4 6 10 8 i d =10a 38a 2 0.1 7 5 3 2 10 22 357 ciss tc= --25 c 75 c 25 c 1.0 7 5 7 3 2 10 100 7 5 3 2 3 2 1.0 7 5 3 2 10 7 5 3 2 100 7 5 3 2 3 100 1000 10000 7 5 7 7 5 3 2 3 2 19a it15697 --60 --40 --20 0 20 40 60 80 100 120 140 160 0 20 14 6 2 18 12 10 16 8 4 v gs =4.0v, i d =10a v gs =4.5v, i d =19a v gs =10.0v, i d =38a tc=25 c single pulse single pulse v ds =10v single pulse v gs =0v single pulse
atp214 no. a1712-4/7 a s o drain-to-source voltage, v ds -- v drain current, i d -- a it15514 0.1 1.0 2 3 5 7 2 3 5 7 2 3 5 5 3 2 7 10 0.1 i dp =225a (pw 10 s) i d =75a 100 s 1ms 10ms 100ms dc operation operation in this area is limited by r ds (on). 1.0 23 57 2 10 100 357 23 7 5 10 s 100 tc=25 c single pulse v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v it15711 0 0 1 2 3 4 5 6 7 8 100 90 80 70 10 20 30 40 60 50 10 9 v ds =30v i d =75a e as -- ta avalanche energy derating factor -- % ambient temperature, ta -- c 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 it15179 p d -- tc allowable power dissipation, p d -- w case temperature, tc -- c it15513 0 0 20 40 60 80 100 140 120 60 50 40 20 30 10 70 160
atp214 no. a1712-5/7 taping speci cation atp214-tl-h
atp214 no. a1712-6/7 outline drawing land pattern example atp214-tl-h mass (g) unit 0.266 * for reference mm unit: mm 6.5 6.7 1.6 2 2.3 2.3 1.5
atp214 no. a1712-7/7 ps this catalog provides information as of june, 2012. speci cations and information herein are subject to change without notice. note on usage : since the atp214 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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